Methods for manufacturing semiconductor devices

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United States of America Patent

PATENT NO 9899270
SERIAL NO

14233320

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Abstract

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There is disclosed a method for manufacturing a semiconductor device comprising two opposite types of MOSFETs formed on one semiconductor substrate, the method comprising: forming a portion of the MOSFET on the semiconductor substrate, said portion of said MOSFET comprising source/drains regions located in the semiconductor substrate, a dummy gate stack located between the source/drain region and above the semiconductor substrate and a gate spacer surrounding the dummy gate stack; removing the dummy gate stack of said MOSFET to form a gate opening which exposes the surface of the semiconductor substrate; forming an interfacial oxide layer on the exposed surface of the semiconductor structure; forming a high-K gate dielectric on the interfacial oxide layer within the gate opening; forming a first metal gate layer on the high-K gate dielectric; implanting doping ions in the first metal gate layer; forming a second metal gate layer on the first metal gate layer to fill up the gate opening; and annealing to diffuse and accumulate the doping ions at an upper interface between the high-K gate dielectric and the first metal gate layer and at a lower interface between the high-K gate dielectric and the interfacial oxide, and generating an electric dipole at the lower interface between the high-K gate dielectric and the interfacial oxide by interfacial reaction.

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Patent Owner(s)

Patent OwnerAddress
INSTITUTE OF MICROELECTRONICS CHINESE ACADEMY OF SCIENCES100029 BEIJING CITY CHAOYANG DISTRICT BEITUCHENG WEST ROAD NO 3 CHINESE ACADEMY OF SCIENCES INSTITUTE OF MICROELECTRONICS MUNICIPAL DISTRICT BEIJING CITY 100029

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Dapeng Beijing, CN 58 328
Liang, Qingqing Lagrangeville, US 158 1676
Xu, Gaobo Beijing, CN 18 84
Xu, Qiuxia Beijing, CN 59 343
Zhao, Chao Kessel-lo, BE 100 372
Zhou, Huajie Beijing, CN 16 98
Zhu, Huilong Poughkeepsie, US 589 8348

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