Insulated gate semiconductor device with soft switching behavior
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United States of America Patent
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Feb 20, 2018
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app pub date -
Oct 21, 2016
filing date -
Oct 29, 2015
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Abstract
A semiconductor device and a method for producing thereof is provided. The semiconductor device includes a plurality of device cells, each comprising a body region, a source region, and a gate electrode adjacent to the body region and dielectrically insulated from the body region by a gate dielectric; and an electrically conductive gate layer comprising the gate electrodes or electrically connected to the gate electrodes of the plurality of device cells. The gate layer is electrically connected to a gate conductor and includes at least one of an increased resistance region and a decreased resistance region.
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