Tunnel barrier schottky

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United States of America Patent

PATENT NO 9899482
SERIAL NO

15093710

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Abstract

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A diode includes: a semiconductor substrate; a cathode metal layer contacting a bottom of the substrate; a semiconductor drift layer on the substrate; a graded aluminum gallium nitride (AlGaN) semiconductor barrier layer on the drift layer and having a larger bandgap than the drift layer, the barrier layer having a top surface and a bottom surface between the drift layer and the top surface, the barrier layer having an increasing aluminum composition from the bottom surface to the top surface; and an anode metal layer directly contacting the top surface of the barrier layer.

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Patent Owner(s)

  • HRL LABORATORIES, LLC

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cao, Yu Agoura Hills, US 387 9107
Chu, Rongming Agoura Hills, US 54 1410
Li, Zijian Thousand Oaks, US 13 6
Williams, Adam J Malibu, US 8 95

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