Two-dimensional material semiconductor device

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United States of America Patent

PATENT NO 9899501
SERIAL NO

15380887

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Abstract

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A semiconductor device comprises a two-dimensional (2D) material layer, the 2D material layer comprising a channel region in between a source region and a drain region; a first gate stack and a second gate stack in contact with the 2D material layer, the first and second gate stack being spaced apart over a distance; the first gate stack located on the channel region of the 2D material layer and in between the source region and the second gate stack, the first gate stack arranged to control the injection of carriers from the source region to the channel region and the second gate stack located on the channel region of the 2D material layer; the second gate stack arranged to control the conduction of the channel region.

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Patent Owner(s)

Patent OwnerAddress
IMEC VZWKAPELDREEF 75 LEUVEN 3001
KATHOLIEKE UNIVERSITEIT LEUVEN KU LEUVEN R&DWAAISTRAAT 6 BOX 5105 LEUVEN 3000

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huyghebaert, Cedric Heverlee, BE 13 146
Lu, Anh Khoa Luik, BE 1 3
Pourtois, Geoffrey Villers-la-Ville, BE 12 52

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