Method of producing periodic table group 13 metal nitride semiconductor crystal and periodic table group 13 metal nitride semiconductor crystal produced by this production method
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United States of America Patent
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Feb 20, 2018
Grant Date -
Oct 2, 2014
app pub date -
Apr 21, 2014
filing date -
Oct 21, 2011
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Abstract
For a Periodic Table Group 13 metal nitride semiconductor crystal obtained by epitaxial growth on the main surface of a base substrate that has a nonpolar plane and/or a semipolar plane as its main surface, an object of the present invention is to provide a high-quality semiconductor crystal that has a low absorption coefficient, is favorable for a device, and is controlled dopant concentration in the crystal, and to provide a production method that can produce the semiconductor crystal. A high-quality Periodic Table Group 13 metal nitride semiconductor crystal that has a precisely controlled dopant concentration within the crystal and a low absorption coefficient and that is thus favorable for a device, can be provided by inhibiting oxygen doping caused by impurity oxygen and having the Si concentration higher than the O concentration.
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