Method for producing group III nitride semiconductor using a crucible

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9903042
SERIAL NO

14958826

Stats

ATTORNEY / AGENT: (SPONSORED)

Importance

Loading Importance Indicators... loading....

Abstract

See full text

An object of the present invention is to suppress macro step growth in the growth of GaN crystal through a flux method. As a crucible for holding a melt when growing a GaN crystal through the Na flux method, the crucible is made of alumina and produced by plaster mold casting. The crucible is used, in which there are alumina grains abnormally grown on the inner walls thereof, and the maximum grain size of the abnormally grown alumina grains is not less than 10 μm. When such a crucible is selected and used, the macro step growth can be suppressed, thereby improving the GaN crystal quality.

Loading the Abstract Image... loading....

First Claim

See full text

Family

Loading Family data... loading....

Patent Owner(s)

  • TOYODA GOSEI CO., LTD.

International Classification(s)

  • [Classification Symbol]
  • [Patents Count]

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Moriyama, Miki Kiyosu, JP 40 228
Yamazaki, Masateru Kiyosu, JP 8 0

Cited Art Landscape

Load Citation

Patent Citation Ranking

Forward Cite Landscape

Load Citation

Maintenance Fees

Fee Large entity fee small entity fee micro entity fee due date
7.5 Year Payment $3600.00 $1800.00 $900.00 Aug 27, 2025
11.5 Year Payment $7400.00 $3700.00 $1850.00 Aug 27, 2029
Fee Large entity fee small entity fee micro entity fee
Surcharge - 7.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge - 11.5 year - Late payment within 6 months $160.00 $80.00 $40.00
Surcharge after expiration - Late payment is unavoidable $700.00 $350.00 $175.00
Surcharge after expiration - Late payment is unintentional $1,640.00 $820.00 $410.00