Method and solution for cleaning InGaAs (or III-V) substrates

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United States of America Patent

PATENT NO 9905412
SERIAL NO

15340292

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Abstract

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Embodiments described herein generally relate to improved methods and solutions for cleaning a substrate prior to epitaxial growth of Group III-V channel materials. A first processing gas, which includes a noble gas and a hydrogen source, is used to remove the native oxide layer from the substrate surface. A second processing gas, Ar/Cl2/H2, is then used to create a reactive surface layer on the substrate surface. Finally, a hydrogen bake with a third processing gas, which includes a hydrogen source and an arsine source, is used to remove the reactive layer from the substrate surface.

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Patent Owner(s)

Patent OwnerAddress
APPLIED MATERIALS INC3050 BOWERS AVENUE SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bao, Xinyu Fremont, US 93 1234
Yan, Chun San Jose, US 61 2003

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