Dry etching method

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United States of America Patent

PATENT NO 9905431
SERIAL NO

14448709

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Abstract

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In the present invention, a dry etching method for plasma etching a second laminated film in which a first laminated film in which a silicon-containing film and a silicon dioxide film are laminated is laminated in plurality and an inorganic film arranged over the second laminated film, includes etching the inorganic film and the second laminated film by a mixed gas of an NF3 gas and a CH3F gas.

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Patent Owner(s)

  • HITACHI HIGH-TECHNOLOGIES CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Arase, Takao Tokyo, JP 25 662
Machida, Ryuta Tokyo, JP 1 5
Mori, Masahito Tokyo, JP 92 1187
Terakura, Satoshi Tokyo, JP 3 298

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