Inverted-T shaped via for reducing adverse stress-migration effects

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United States of America Patent

PATENT NO 9905509
SERIAL NO

14341351

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Abstract

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A semiconductor interconnect structure is formed as a via with an inverted-T shape to increase the reliability of the interface between the interconnect structure and an underlying electrically conductive, e.g., copper (Cu), layer of material. The inverted-T shape effectively increases a bottom critical dimension of the via, thereby reducing and/or eliminating via degradation of the interconnect structure caused by voids in the electrically conductive layer introduced during high-temperature or stress-migration baking.

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Patent Owner(s)

  • MACRONIX INTERNATIONAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, Yen-Lu Hsinchu, TW 1 6
Hong, Shih-Ping Hsinchu, TW 31 268
Yang, Ta Hung Hsinchu, TW 8 45

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