Semiconductor integrated circuit device relating to resistance characteristics

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United States of America Patent

PATENT NO 9905567
SERIAL NO

15295042

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Abstract

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A semiconductor integrated circuit device may include a structure, a first capping layer, a channel layer and a second capping layer. The structure may have an opening formed in the structure. The first capping layer may be formed in the opening of the structure. The channel layer may be arranged between the structure and the first capping layer. The second capping layer may be arranged on the channel layer and the first capping layer.

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Patent Owner(s)

  • SK HYNIX INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Jin Ha Icheon-si, KR 74 540

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