Semiconductor substrate
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United States of America Patent
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Feb 27, 2018
Issued Date -
N/A
app pub date -
Jan 3, 2017
filing date -
Jan 14, 2013
priority date (Note) -
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Abstract
Provided is a semiconductor substrate including a seed layer disposed on a substrate, a buffer layer disposed on the seed layer, a plurality of nitride semiconductor layers disposed on the buffer layer, and at least one stress control layer between the plurality of nitride semiconductor layers. The buffer layer includes a plurality of step regions and at least one heterogeneous region. The plurality of step regions includes the same nitride semiconductor material. The heterogeneous region includes a different nitride semiconductor material from the step regions.
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