Fabrication of thin-film devices using selective area epitaxy

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United States of America Patent

PATENT NO 9905727
SERIAL NO

15345046

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Abstract

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A thin film device described herein includes a first thin film layer, a second film layer and a heterostructure within the second film layer. The first thin film layer is atop a substrate. The second thin film layer is grown from the first thin film layer through a patterned mask, having openings, under selective area growth (SAG) conditions. The second thin film layer is configured to be released from the first thin film layer by etching a trench. The etched trench may provide access to the patterned mask and the patterned mask may be eliminated with a wet etchant.

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Patent Owner(s)

  • PALO ALTO RESEARCH CENTER INCORPORATED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Wunderer, Thomas Palo Alto, US 44 891

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