Light emitting device with bonded interface

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United States of America Patent

PATENT NO 9905730
SERIAL NO

14200203

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Abstract

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In some embodiments of the invention, a transparent substrate AlInGaP device includes an etch stop layer that may be less absorbing than a conventional etch stop layer. In some embodiments of the invention, a transparent substrate AlInGaP device includes a bonded interface that may be configured to give a lower forward voltage than a conventional bonded interface. Reducing the absorption and/or the forward voltage in a device may improve the efficiency of the device.

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Patent Owner(s)

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LUMILEDS LLC370 WEST TRIMBLE ROAD SAN JOSE CA 95131

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aldaz, Rafael I Santa Clara, US 16 378
Colbentz, Deborah L Sunnyvale, US 1 0
Grillot, Patrick N San Jose, US 13 180
Munkholm, Anneli Mountain View, US 13 127
Zhao, Hanmin Fremont, US 8 310

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