Nonlinear memristor devices with three-layer selectors

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United States of America Patent

PATENT NO 9905757
SERIAL NO

15032913

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Abstract

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A nonlinear memristor device with a three-layer selector includes a memristor in electrical series with a three-layer selector. The memristor comprises at least one electrically conducting layer and at least one electrically insulating layer. The three-layer selector comprises a three-layer structure selected from the group consisting of XN—XO—XN; XN—YO—ZN; XN—YO—XN; XO—XN—XO; XO—YN—XO; XO—YN—ZO; XO—YO—XO; XO—YO—ZO; XN—YN—ZN; and XN—YN—XN, X represents a compound-forming metal different from Y and Z.

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Patent Owner(s)

  • HEWLETT PACKARD ENTERPRISE DEVELOPMENT LP

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Choi, Byungjoon Palo Alto, US 2 18
Gibson, Gary Palo Alto, US 109 1023
Jackson, Warren Palo Alto, US 69 937
Williams, R Stanley Palo Alto, US 277 5890
Yang, Jianhua Palo Alto, US 174 2054

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