Semiconductor device and method for manufacturing same
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United States of America Patent
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Feb 27, 2018
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app pub date -
May 20, 2015
filing date -
May 29, 2014
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Abstract
The semiconductor device according to the present invention has an upper electrode, a first lower layer wiring that also functions as a lower electrode, an electrical resistance-changing film interposed between the upper electrode and the first lower layer wiring, a second lower layer wiring, and a contact plug, the contact plug connecting to the upper electrode and to the second lower layer wiring. The present invention yields a semiconductor device with which it is possible to dispose elements in high density while maintaining the reliability and manufacturing yield of the electrical resistance-changing element.
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