Non-volatile resistance-switching thin film devices

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United States of America Patent

PATENT NO 9905760
SERIAL NO

15181761

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Abstract

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Disclosed herein are resistive switching devices having, e.g., an amorphous layer comprised of an insulating aluminum-based or silicon-based material and a conducting material. The amorphous layer may be disposed between two or more electrodes and be capable of switching between at least two resistance states. Circuits and memory devices including resistive switching devices are also disclosed, and a composition of matter involving an insulating aluminum-based or an silicon-based material and a conducting material. Also disclosed herein are methods for switching the resistance of an amorphous material.

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Patent Owner(s)

  • THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chen, I-Wei Swarthmore, US 31 604
Yang, Xiang Philadelphia, US 203 468

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