High-purity copper-cobalt alloy sputtering target

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United States of America Patent

PATENT NO 9909196
SERIAL NO

14759424

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Abstract

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A high purity copper-cobalt alloy sputtering target containing 0.1 to 20 at % of Co, and remainder being Cu and unavoidable impurities, wherein a size (dimension) of precipitates in the target structure is 10 μm or less, and a number of precipitates is 500 precipitates/mm2 or less. It is thereby possible to provide a high purity copper-cobalt alloy sputtering target capable of inhibiting the generation of particles during sputtering, and in particular improving the yield and reliability of semiconductor products that are being subject to further miniaturization and higher integration.

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Patent Owner(s)

  • JX NIPPON MINING & METALS CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Nagata, Kenichi Ibaraki, JP 45 555
Otsuki, Tomio Ibaraki, JP 16 62

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