Method for depositing dielectric film in trenches by PEALD

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United States of America Patent

PATENT NO 9909214
SERIAL NO

14884695

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Abstract

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A method for depositing a dielectric film in a trench by plasma-enhanced atomic layer deposition (PEALD) includes depositing a dielectric film in a trench of a substrate by PEALD under conditions wherein the wet etch rate of the depositing film on a top surface of the substrate is substantially equivalent to or higher than the wet etch rate of the depositing film at a sidewall of the trench, wherein a precursor fed into the reaction space has —N(CH3)2 as a functional group.

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Patent Owner(s)

Patent OwnerAddress
ASM IP HOLDING B VVERSTERKERSTRAAT 8 ALMERE 1322 AP

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Suemori, Hidemi Helsinki, FI 32 3117

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