Seed selection and growth methods for reduced-crack group III nitride bulk crystals

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United States of America Patent

PATENT NO 9909230
SERIAL NO

15004464

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Abstract

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In one instance, the invention provides a method of growing bulk crystal of group III nitride using a seed crystal selected by (a) measuring x-ray rocking curves of a seed crystal at more than one point, (b) quantifying the peak widths of the measured x-ray rocking curves, and (c) evaluating the distribution of the quantified peak widths. The invention also includes the method of selecting a seed crystal for growing bulk crystal of group III nitride.

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Patent OwnerAddress
SIXPOINT MATERIALS INC37 INDUSTRIAL WAY UNIT 106 BUELLTON CA 93427

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashimoto, Tadao Santa Barbara, US 93 1210
Key, Daryl La Canada, US 5 21
Letts, Edward Buellton, US 36 340

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