III-V photonic integration on silicon

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United States of America Patent

PATENT NO 9910220
APP PUB NO 20150309254A1
SERIAL NO

14794106

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Abstract

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Photonic integrated circuits on silicon are disclosed. By bonding a wafer of HI-V material as an active region to silicon and removing the substrate, the lasers, amplifiers, modulators, and other devices can be processed using standard photolithographic techniques on the silicon substrate. The coupling between the silicon waveguide and the III-V gain region allows for integration of low threshold lasers, tunable lasers, and other photonic integrated circuits with Complimentary Metal Oxide Semiconductor (CMOS) integrated circuits.

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Patent Owner(s)

  • THE REGENTS OF THE UNIVERSITY OF CALIFORNIA

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bowers, John E Santa Barbara, US 70 1682

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