Methods of forming nanostructures having low defect density

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United States of America Patent

PATENT NO 9911609
SERIAL NO

15606601

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A method of forming a nanostructure comprises forming self-assembled nucleic acids on at least a portion of a substrate. The method further comprises contacting the self-assembled nucleic acids on the at least a portion of a substrate with a solution comprising at least one repair enzyme to repair defects in the self-assembled nucleic acids. The method may comprise repeating the repair of defects in the self-assembled nucleic acids on the at least a portion of a substrate until a desired, reduced threshold level of defect density is achieved. A semiconductor structure comprises a pattern of self-assembled nucleic acids defining a template having at least one aperture therethrough. At least one of the apertures has a dimension of less than about 50 nm.

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Patent Owner(s)

  • MICRON TECHNOLOGY, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sandhu, Gurtej S Boise, US 1217 32434

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