Nitride semiconductor device, production method thereof, diode, and field effect transistor

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United States of America Patent

PATENT NO 9911842
SERIAL NO

15097888

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Abstract

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A nitride semiconductor device includes; a semiconductor stack configured with a plurality of semiconductor layers made of nitride semiconductors provided on a base having a conductive portion; a first electrode provided on a portion of a semiconductor layer of the semiconductor layers configuring the semiconductor stack; a second electrode provided on a portion of a semiconductor layer of the semiconductor layers configuring the semiconductor stack separately from the first electrode; a first wiring provided at an upper layer of the first electrode; and a second wiring provided at an upper layer of the second electrode. A low permittivity area being a portion of which permittivity is lower than permittivities of the nitride semiconductors configuring the semiconductor stack at a lower layer of a portion of at least one of the first electrode and the second electrode other than a portion being junctioned with the semiconductor stack electrically.

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Patent Owner(s)

  • FURUKAWA ELECTRIC CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Ishii, Hirotatsu Tokyo, JP 20 225
Iwami, Masayuki Tokyo, JP 25 222
Kaya, Shusuke Tokyo, JP 14 178
Kokawa, Takuya Tokyo, JP 17 120
Li, Jiang Tokyo, JP 288 4210
Otomo, Shinya Tokyo, JP 1 11
Takaki, Keishi Tokyo, JP 26 133
Tamura, Ryosuke Tokyo, JP 10 50
Umeno, Kazuyuki Tokyo, JP 14 31

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