Low resistivity single crystal silicon carbide wafer

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United States of America Patent

PATENT NO 9915011
SERIAL NO

12592747

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Abstract

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The invention provides a low resistivity silicon carbide single crystal wafer for fabricating semiconductor devices having excellent characteristics. The low resistivity silicon carbide single crystal wafer has a specific volume resistance of 0.001 Ωcm to 0.012 Ωcm and 90% or greater of the entire wafer surface area is covered by an SiC single crystal surface of a roughness (Ra) of 1.0 nm or less.

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Patent Owner(s)

Patent OwnerAddress
SHOWA DENKO K K13-9 SHIBADAIMON 1-CHOME MINATO-KU TOKYO 105-8518

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fujimoto, Tatsuo Tokyo, JP 37 211
Katsuno, Masakazu Tokyo, JP 18 147
Nakabayashi, Masashi Tokyo, JP 24 153
Ohtani, Noboru Tokyo, JP 32 551
Yashiro, Hirokatsu Tokyo, JP 15 232

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