Magnetic random access memory using current sense amplifier for reading cell data and related method

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United States of America Patent

PATENT NO 9916883
SERIAL NO

15442139

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Abstract

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A circuit includes a first and second reference cells and a current sense amplifier. The first and second reference cells are configured to store a first and a second logic values, respectively. The current sense amplifier is configured to couple the first reference cell to a first node of the current sense amplifier, and couple the second reference cell to a second node of the current sense amplifier for reading bits stored in the first reference cell and the second reference cell.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-78

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Romanovskyy, Sergiy Ottawa, CA 22 115

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