Vapor phase growth method of growing a film on a substrate while heating the substrate with a heating unit
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United States of America Patent
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Mar 13, 2018
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May 8, 2015
filing date -
May 12, 2014
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Abstract
A vapor phase growth method of growing a film on a substrate by supplying material gases to the substrate while heating the substrate with a heating unit according to an embodiment, the method includes: measuring a temperature of the substrate with a radiation thermometer; executing a temperature feedback control to control an output of the heating unit to cause a measurement value of the radiation thermometer to have a set value when a film is not grown on the substrate; and executing a constant output control to maintain an output of the heating unit constant when a film causing thin-film interference in a wavelength measured by the radiation thermometer is grown on the substrate.
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