Semiconductor device comprising PN junction diode and schottky barrier diode

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United States of America Patent

PATENT NO 9917074
SERIAL NO

15609407

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Abstract

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A semiconductor device includes a MOSFET including a PN junction diode. A unipolar device is connected in parallel to the MOSFET and has two terminals. A first wire connects the PN junction diode to one of the two terminals of the unipolar device. A second wire connects the one of the two terminals of the unipolar device to an output line, so that the output line is connected to the MOSFET and the unipolar device via the first wire and the second wire. In one embodiment the connection of the first wire to the diode is with its anode, and in another the connection is with the cathode.

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Patent Owner(s)

  • ROHM CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Okumura, Keiji Kyoto, JP 96 398

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