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Abstract

A hybrid MOS-PCM IC switch utilizes both MOS transistors and groups of parallel-connected Phase-Change Material (PCM) cells to control signal transmissions. The MOS transistors are separated by PCM cell groups, and the PCM cells are configured to generate similar C_OFF or lower values as the MOS transistors, whereby the hybrid switch is both smaller and exhibits lower FOM than standard CMOS SOI switches. When switched into an open (OFF/high-resistance) state, both the PCM cells and MOS transistors function to distribute high VBSR voltages, and the MOS transistors prevent unintended phase changes (ON/OFF switching) of the PCM cells by preventing exponential current flow. In the closed (ON/conducting) state, the PCM cells facilitate lower total R_ON, whereby the hybrid CMOS SOI switch achieves improved FOM. The MOS transistors may also function as drivers during programming (switching) of direct-heating-type PCM cells.

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First Claim