Semiconductor device and manufacturing method

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United States of America Patent

PATENT NO 9917187
SERIAL NO

14704692

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Abstract

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A semiconductor device comprising at least one active layer on a substrate and a first contact to the at least one active layer, the first contact comprising a metal in contact with the at least one active layer and a capping layer on the metal, the capping layer comprising a diffusion barrier, wherein the capping layer is patterned to form a pattern comprising regions of the contact covered by the capping layer and regions of the contact that are uncovered.

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Patent Owner(s)

Patent OwnerAddress
NEXPERIA B VJONKERBOSPLEIN 52 NIJMEGEN 6534AB

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Donkers, Johannes Josephus Theodorus Marinus Eindhoven, NL 44 111
Heil, Stephan Bastiaan Simon Eindhoven, NL 4 14
Sonsky, Jan Louvain, BE 45 488

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