GaSbGe phase change memory materials

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United States of America Patent

PATENT NO 9917252
SERIAL NO

14936318

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A Ga—Sb—Ge family of phase change memory materials is described, including GaxSbyGez, wherein a Ga atomic concentration x is within a range from 20% to 45%, a Sb atomic concentration y is within a range from 25% to 40% and a Ge atomic concentration z is within a range from 25% to 55%, is described wherein the material has a crystallization transition temperature Tx greater than 360° C. Adding impurities including one or more element selected from silicon Si, carbon C, oxygen O and nitrogen N, can also increase the crystallization transition temperature Tx to temperatures greater than 400° C., and also reduce reset current.

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Patent Owner(s)

  • MACRONIX INTERNATIONAL CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cheng, Huai-Yu White Plains, US 31 277
Lung, Hsiang-Lan Ardsley, US 308 9509

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