Method and system for MEMS devices with dual damascene formed electrodes

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United States of America Patent

PATENT NO 9919915
SERIAL NO

15182172

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Abstract

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Methods and systems for MEMS devices with dual damascene formed electrodes is disclosed and may include forming first and second dielectric layers on a semiconductor substrate that includes a conductive layer at least partially covered by the first dielectric layer; removing a portion of the second dielectric layer; forming vias through the second dielectric layer and at least a portion of the second dielectric layer, where the via extends to the conductive layer; forming electrodes by filling the vias and a volume that is the removed portion of the second dielectric layer with a first metal; and coupling a micro-electro-mechanical systems (MEMS) substrate to the semiconductor substrate. A third dielectric layer may be formed between the first and second dielectric layers. A metal pad may be formed on at least one electrode by depositing a second metal on the electrode and removing portions of the second metal, which may be aluminum.

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Patent Owner(s)

Patent OwnerAddress
INVENSENSE INC1745 TECHNOLOGY DRIVE SUITE 200 SAN JOSE CA 95110

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Huang, Chunchieh Fremont, US 33 216
Smeys, Peter San Jose, US 101 1067

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