Heat treatment method and heat treatment apparatus for heating substrate by irradiating substrate with light

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United States of America Patent

PATENT NO 9920993
SERIAL NO

13468381

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Abstract

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A photodetector element for receiving radiated light from a surface of a semiconductor wafer loses a detection function because the intensity of the received light exceeds a detection limit while a flash lamp emits light. Measurement is not performed during the above-mentioned period, and the intensity of the radiated light from the surface of the semiconductor wafer is measured after the flash lamp stops emitting light and the photodetector element restores the detection function. Then, the temperature of the surface of the semiconductor wafer heated by irradiation with a flash of light is calculated based on the measured intensity of the radiated light. Accordingly, even in a case where intense irradiation is performed in an extremely short period of time, such as flash irradiation, the flash of light does not act as ambient light, which enables to obtain the surface temperature of the semiconductor wafer.

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Patent Owner(s)

  • SCREEN HOLDINGS CO., LTD.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hashimoto, Kazuyuki Kyoto, JP 81 451
Kusuda, Tatsufumi Kyoto, JP 42 1615

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