Integrated voltage regulators with magnetically enhanced inductors

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United States of America Patent

PATENT NO 9921640
SERIAL NO

13631092

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Abstract

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Magnetically enhanced inductors integrated with microelectronic devices at chip-level. In embodiments, magnetically enhanced inductors include a through substrate vias (TSVs) with fill metal to carry an electrical current proximate to a magnetic layer disposed on a substrate through which the TSV passes. In certain magnetically enhanced inductor embodiments, a TSV fill metal is disposed within a magnetic material lining the TSV. In certain magnetically enhanced inductor embodiments, a magnetically enhanced inductor includes a plurality of interconnected TSVs disposed proximate to a magnetic material layer on a side of a substrate. In embodiments, voltage regulation circuitry disposed on a first side of a substrate is integrated with one or more magnetically enhanced inductors utilizing a TSV passing through the substrate. In further embodiments, integrated circuitry on a same substrate as the magnetically enhanced inductor, or on another substrate stacked thereon, completes the VR and/or is powered by the VR circuitry.

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Patent Owner(s)

Patent OwnerAddress
INTEL CORPORATION2200 MISSION COLLEGE BOULEVARD SANTA CLARA CA 95054

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Droege, Guido Braunschweig, DE 7 87
Fischer, Paul B Portland, US 98 501
Kamgaing, Telesphor Chandler, US 289 1778
Saraswat, Ruchir Swindon, GB 36 537
Schaefer, Andre Braunschweig, DE 53 524
Zillmann, Uwe Braunschweig, DE 15 149

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