Magnetoresistance element with improved response to magnetic fields

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United States of America Patent

PATENT NO 9922673
SERIAL NO

14529564

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Abstract

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A magnetoresistance element has a pinning arrangement with two antiferromagnetic pinning layers, two pinned layers, and a free layer. A spacer layer between one of the two antiferromagnetic pinning layers and the free layer has a material selected to allow a controllable partial pinning by the one of the two antiferromagnetic pinning layers.

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Patent Owner(s)

  • ALLEGRO MICROSYSTEMS, LLC;COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cadugan, Bryan Bedford, US 48 490
Campiglio, Paolo Montrouge, FR 33 319
Fermon, Claude Orsay, FR 35 463
Lassalle-Balier, Rémy Villebon sur Yvette, FR 40 239

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