Deposition system for growth of inclined c-axis piezoelectric material structures

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United States of America Patent

PATENT NO 9922809
SERIAL NO

15293063

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Abstract

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Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

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Patent Owner(s)

  • QORVO US, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Belsick, John Bend, US 19 108
McCarron, Kevin Bend, US 13 129

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