Method of manufacturing semiconductor device, using hydrocarbon and halogen-based precursors, substrate processing apparatus for processing same, and recording medium comprising hydrocarbon and halogen-based precursors
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United States of America Patent
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Mar 20, 2018
Grant Date -
Oct 22, 2015
app pub date -
Mar 27, 2015
filing date -
Apr 17, 2014
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Abstract
Provided is a technique of forming a film containing a first element and a second element on a substrate by performing a cycle a predetermined number of times. The cycle includes: (a) supplying a hydro-based precursor containing the first element and a halogen-based precursor containing the second element into a process chamber accommodating a substrate to confine the hydro-based precursor and the halogen-based precursor in the process chamber; (b) maintaining a state where the hydro-based precursor and the halogen-based precursor are confined in the process chamber; and (c) exhausting the process chamber.
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