Method of forming silicon film

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United States of America Patent

PATENT NO 9922824
SERIAL NO

14978328

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Abstract

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A method of forming a silicon film on a target surface of a target object, including: performing a gas process on the target surface of the target object using an oxygen gas and a hydrogen gas; forming the silicon film on the target surface to which the gas process has been performed, wherein the performing a gas process and the forming the silicon film are performed within a single processing chamber.

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Patent Owner(s)

  • TOKYO ELECTRON LIMITED

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Okada, Mitsuhiro Nirasaki, JP 153 1972

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