Method for making strained semiconductor device and related methods

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United States of America Patent

PATENT NO 9922883
SERIAL NO

15180158

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Abstract

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A method for making a semiconductor device is provided. Raised source and drain regions are formed with a tensile strain-inducing material, after thermal treatment to form source drain extension regions, to thereby preserve the strain-inducing material in desired substitutional states.

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Patent Owner(s)

  • GLOBALFOUNDRIES INC.;INTERNATIONAL BUSINESS MACHINES CORPORATION;STMICROELECTRONICS, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Cai, Xiuyu Niskayuna, US 195 3743
Liu, Qing Watervliet, US 483 5041
Xie, Ruilong Niskayuna, US 1423 10722
Yeh, Chun-Chen Clifton Park, US 417 3463

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