Semiconductor lithography alignment feature with epitaxy blocker

Number of patents in Portfolio can not be more than 2000

United States of America Patent

PATENT NO 9922936
SERIAL NO

15250991

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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A type III-V semiconductor substrate is provided. Semiconductor material is removed from the type III-V semiconductor substrate such that the type III-V semiconductor substrate comprises one or more alignment features extending away from a main lateral surface. Each of the alignment features includes a first lateral surface that is vertically offset from the main lateral surface, and first and second vertical sidewalls that extend between the first lateral surface and the main lateral surface. An epitaxy blocker is formed on the first and second vertical sidewalls of each alignment feature. A type III-V semiconductor regrown layer is epitaxially grown on a portion of the semiconductor wafer that includes the one or more alignment features. The epitaxy blocker prevents the type III-V semiconductor regrown layer from forming on the first and second vertical sidewalls of the one or more alignment features.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AUSTRIA AGSIEMENSSTRASSE 2 VILLACH 9500

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Capriotti, Mattia Villach, AT 2 0
Chowdhury, Uttiya Villach, AT 5 22
Lavanga, Simone Faak am See, AT 11 59

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