Method for manufacturing TFT substrate and structure thereof
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United States of America Patent
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Mar 20, 2018
Issued Date -
N/A
app pub date -
May 9, 2017
filing date -
Apr 29, 2015
priority date (Note) -
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Abstract
A TFT substrate includes a base plate on which first and second gate electrodes respectively corresponding to first and second TFTs are formed. A gate insulation layer, a semiconductor layer, and an etch stop layer are sequentially formed on the base plate and the first and second electrodes. A single photolithographic process is conducted simultaneously on the gate insulation layer, the semiconductor layer, and the etch stop layer with the same gray tone mask to form separate semiconductor portions for the two TFTs and also form contact holes in the etch stop layer and the gate insulation layer to receive sources and drains of the two TFTs to be deposited therein and in contact with the two semiconductor portions.
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