Silicon-carbide transistor device with a shielded gate
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United States of America Patent
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Mar 20, 2018
Grant Date -
Apr 27, 2017
app pub date -
Jan 6, 2017
filing date -
Dec 11, 2014
priority date (Note) -
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Abstract
A SIC transistor device includes a silicon-carbide semiconductor substrate having a plurality of first doped regions laterally spaced apart from one another and beneath a main surface of the substrate, a second doped region extending from the main surface to a third doped region that is above the first doped regions, and a plurality of fourth doped regions in the substrate extending from the main surface to the first doped regions. The second doped region has a first conductivity type. The first, third and fourth doped regions have a second conductivity type opposite the first conductivity type. A gate trench extends through the second and third doped regions. The gate trench has sidewalls, a bottom and rounded corners between the bottom and the sidewalls.
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