Thin-film transistor and method for fabricating the same, array substrate and method for fabricating the same, and display device

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United States of America Patent

PATENT NO 9923067
SERIAL NO

15097740

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Abstract

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A thin-film transistor (TFT) includes a gate electrode, a gate insulation layer, a source electrode, a drain electrode and an active layer arranged on a base substrate. The active layer includes an un-doped a-Si layer, a first doped a-Si layer and a second doped a-Si layer. One of the source electrode and the drain electrode is in contact with the first doped a-Si layer, and the other of the source electrode and the drain electrode is in contact with the second doped a-Si layer. The source electrode and the drain electrode are on different horizontal planes and spaced apart from each other, and the un-doped a-Si layer is positioned between the source electrode and the drain electrode.

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Patent Owner(s)

Patent OwnerAddress
BOE TECHNOLOGY GROUP CO LTD100015 NO 10 JIUXIANQIAO ROAD BEIJING CHAOYANG DISTRICT BEIJING CITY BEIJING CITY 100015
BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO LTDNO 8 XIHUANZHONGLU BDA BEIJING 100176

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Bao, Zhiying Beijing, CN 55 167
Jiang, Wenbo Beijing, CN 43 143
Xie, Shiyi Beijing, CN 4 2

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