Semiconductor device with vertically integrated pHEMTs

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United States of America Patent

PATENT NO 9923088
SERIAL NO

15239005

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Abstract

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The present disclosure relates to a semiconductor device with vertically integrated pseudomorphic high electron mobility transistors (pHEMTs). The disclosed semiconductor device includes a substrate, a lower pHEMT structure with a lower pHEMT, an isolation layer, and an upper pHEMT structure with an upper pHEMT. The lower pHEMT structure is formed over the substrate and has a first region and a second region that is laterally disposed with the first region. The lower pHEMT is formed in or on the second region. The isolation layer resides over the first region. The upper pHEMT structure is formed over the isolation layer and does not extend over the second region. Herein, the isolation layer separates the lower pHEMT structure from the upper pHEMT structure such that the lower pHEMT and the upper pHEMT operate independently from each other.

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Patent Owner(s)

  • QORVO US, INC.

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hurtt, Sheila K Portland, US 8 78
Nevers, Corey A Hillsboro, US 3 1
Schwartz, Dana A Beaverton, US 1 1

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