Halftone phase shift mask blank, halftone phase shift mask, and pattern exposure method
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United States of America Patent
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Mar 27, 2018
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N/A
app pub date -
Mar 23, 2016
filing date -
Mar 31, 2015
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Abstract
In a halftone phase shift mask blank comprising a transparent substrate and a halftone phase shift film thereon, the halftone phase shift film is composed of a silicon base material consisting of silicon, nitrogen and 0-6 at % of oxygen, has a refractive index n of at least 2.4, an extinction coefficient k of 0.4-0.7, and a thickness of 40-67 nm. The halftone phase shift film is thin enough to be advantageous for photomask pattern formation, has chemical resistance against chemical cleaning, and maintains a necessary phase shift for phase shift function and a necessary transmittance for halftone function.
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