Method for forming semiconductor structure

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United States of America Patent

PATENT NO 9935024
SERIAL NO

15288041

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Abstract

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A semiconductor device structure and method for forming the same are provided. The semiconductor device structure includes a substrate and a conductive pad formed over the substrate. The semiconductor device structure includes a protection layer formed over the conductive pad, and the protection layer has a trench. The semiconductor device structure includes a conductive structure formed in the trench and on the protection layer. The conductive structure is electrically connected to the conductive pad, and the conductive structure has a concave top surface, and the lowest point of the concave top surface is higher than the top surface of the protection layer.

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Patent Owner(s)

Patent OwnerAddress
TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD8 LI-HSIN RD 6 HSINCHU SCIENCE PARK HSINCHU 300-77 R O C

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Chang, Wei-Sen Jinsha Township, Kinmen County, TW 9 45
Kuo, Tin-Hao Hsinchu, TW 255 1772
Tsai, Hao-Yi Hsinchu, TW 489 3426
Tsai, Pei-Chun Taoyuan, TW 27 219

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