High-purity 1H-heptafluorocyclopentene

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United States of America Patent

PATENT NO 9944852
SERIAL NO

14769264

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Abstract

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The present invention is a 1H-Heptafluorocyclopentene having a purity of 99.9 wt % or more and an organochlorine-based compound content of 350 ppm by weight or less. The present invention provides a high-purity 1H-Heptafluorocyclopentene that may be useful as a plasma reaction gas for semiconductors.

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Patent Owner(s)

  • ZEON CORPORATION

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Sugimoto, Tatsuya Tokyo, JP 70 186

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