Substrate cleaning method, substrate cleaning apparatus and vacuum processing system

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United States of America Patent

PATENT NO 9960056
SERIAL NO

14430760

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Abstract

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In order to remove a deposit adhered to the backside of the peripheral portion of a wafer, a cleaning gas containing carbon dioxide gas is set to a pressure that is slightly lower than the pressure corresponding to a vapor pressure line of carbon dioxide at a temperature in the nozzle, and a gas cluster of carbon dioxide is generated. A gas cluster of carbon dioxide generated under such a condition is in a state immediately prior to undergoing a phase change to a liquid and therefore is a gas cluster having a large cluster diameter and having molecules that are firmly solidified.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITED3-1 AKASAKA 5-CHOME MINATO-KU TOKYO 1076325 ?1076325

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Dobashi, Kazuya Nirasaki, JP 42 1046
Inai, Kensuke Nirasaki, JP 7 248
Saito, Misako Nirasaki, JP 23 641

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