Semiconductor device and method for manufacturing the same

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United States of America Patent

PATENT NO 9960136
SERIAL NO

15239745

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Abstract

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A semiconductor device includes a first circuit layer, a copper pillar disposed adjacent to the first circuit layer, a second circuit layer and a solder layer. The second circuit layer includes an electrical contact and a surface finish layer disposed on the electrical contact, wherein a material of the surface finish layer is a combination of at least two of nickel, gold, and palladium. The solder layer is disposed between the copper pillar and the surface finish layer. The solder layer includes a first intermetallic compound (IMC) and a second IMC, wherein the first IMC includes a combination of two or more of copper, nickel and tin, and the second IMC includes a combination of gold and tin, a combination of palladium and tin, or both.

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Patent Owner(s)

Patent OwnerAddress
ADVANCED SEMICONDUCTOR ENGINEERING INCNO 26 JINGSAN RD NANTZ CHIU KAOHSIUNG 811

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hsiao, Yu-Hsiang Kaohsiung, TW 6 82
Lee, Chiu-Wen Kaohsiung, TW 18 25
Lin, Kwang-Lung Kaohsiung, TW 10 166
Yang, Ping-Feng Kaohsiung, TW 13 49

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