Method for manufacturing silicon carbide semiconductor device

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United States of America Patent

PATENT NO 9966437
SERIAL NO

14896973

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Abstract

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Included are the steps of: preparing a silicon carbide substrate having an epitaxial layer formed thereon; forming an upper-layer film on the epitaxial layer; and removing at least a portion of the upper-layer film in an outer peripheral portion of the silicon carbide substrate, and patterning the upper-layer film.

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Patent Owner(s)

Patent OwnerAddress
SUMITOMO ELECTRIC INDUSTRIES LTDOSAKA-SHI OSAKA 541-0041

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Horii, Taku Osaka, JP 37 163

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