Methods of forming tuneable temperature coefficient FR embedded resistors

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United States of America Patent

PATENT NO 9972616
SERIAL NO

14909980

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Abstract

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Methods of forming resistor structures with tunable temperature coefficient of resistance are described. Those methods and structures may include forming an opening in a resistor material adjacent source/drain openings on a device substrate, forming a dielectric material between the resistor material and the source/drain openings, and modifying the resistor material, wherein a temperature coefficient resistance (TCR) of the resistor material is tuned by the modification. The modifications include adjusting a length of the resistor, forming a compound resistor structure, and forming a replacement resistor.

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Patent Owner(s)

Patent OwnerAddress
INTEL CORPORATION2200 MISSION COLLEGE BOULEVARD SANTA CLARA CA 95054

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hafez, Walid Portland, US 33 102
Jan, Chia-Hong Portland, US 160 3310
Lee, Chen-Guan Hillsboro, US 28 126

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