Plasma processing method

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United States of America Patent

PATENT NO 9972776
SERIAL NO

15260351

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Abstract

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According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.

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Patent Owner(s)

Patent OwnerAddress
HITACHI HIGH-TECH CORPORATION17-1 TORANOMON 1-CHOME MINATO-KU TOKYO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hosaka, Norihiro Tokyo, JP 1 6
Ishimaru, Masato Tokyo, JP 7 21
Suyama, Makoto Tokyo, JP 23 114
Toyooka, Hidenori Tokyo, JP 1 6
Yamamoto, Naohiro Tokyo, JP 43 207

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